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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION *High Power Gain: Gpe 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V *High Reliability APPLICATIONS *Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 40 UNIT V Collector-Emitter Voltage RBE= Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25 PC Collector Power Dissipation @Ta=25 Tj Tstg Junction Temperature w w scs .i w 17 4 0.6 5 1 150 -55~150 V V .cn mi e A W Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 125 25 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1970 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= 17 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A; VCE= 10V PO Output Power C Collector Efficiency hFE Classifications X 10-25 A 20-45 w w B 35-70 scs .i w C D 90-180 VCC= 13.5V; Pin= 0.12W; f= 175MHz .cn mi e 10 1 50 180 1.2 W 60 % 55-110 isc Websitewww.iscsemi.cn |
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